vishay byg21 document number 86010 rev. 1.5, 09-oct-00 vishay semiconductors www.vishay.com 1 15811 fast avalanche smd rectifier features ? glass passivated junction low reverse current soft recovery characteristics fast reverse recovery time good switching characteristics wave and reflow solderable applications surface mounting fast rectifier freewheeling diodes in smps and converters snubber diodes parts table absolute maximum ratings t amb = 25 c, unless otherwise specified maximum thermal resistance t amb = 25 c, unless otherwise specified part type differentiation package BYG21K v r = 800 v @ i fav = 1.5 a do-214ac byg21m v r = 1000 v @ i fav = 1.5 a do-214ac parameter test condition part symbol value unit reverse voltage = repetitive peak reverse voltage BYG21K v r = v rrm 800 v byg21m v r = v rrm 1000 v peak forward surge current t p = 10 ms, half sinewave i fsm 30 a average forward current i fav 1.5 a junction and storage temperature range t j = t stg - 55 to + 150 c pulse energy in avalanche mode, non repetitive (inductive load switch off) i (br)r = 1 a, t j = 25 c e r 20 mj parameter test condition part symbol value unit junction lead t l = const. r thjl 25 k/w junction ambient mounted on epoxy-glass hard tissue r thja 150 k/w mounted on epoxy-glass hard tissue, 50 mm 2 35 m cu r thja 125 k/w mounted on al-oxid-ceramic (al 2 o 3 ), 50 mm 2 35 m cu r thja 100 k/w
www.vishay.com 2 document number 86010 rev. 1.5, 09-oct-00 vishay byg21 vishay semiconductors electrical characteristics t amb = 25 c, unless otherwise specified typical characteri stics (tamb = 25 c unless otherwise specified) parameter test condition part symbol min ty p. max unit forward voltage i f = 1 a v f 1.5 v i f = 1.5 a v f 1.6 v reverse current v r = v rrm i r 1 a v r = v rrm , t j = 100 c i r 10 a reverse recovery time i f = 0.5 a, i r = 1 a, i r = 0.25 a t rr 120 ns figure 1. forward current vs. forward voltage figure 2. max. average forward current vs. ambient temperature i ? forward current ( a) 0.001 0.010 0.100 1.000 10.000 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 v f ? forward voltage ( v ) 16428 f t j =25 c t j =150 c 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 25 50 75 100 125 150 t amb ? ambient temperature ( c ) 16429 i ? average forward current ( a ) fav v r =v rrm half sinewave r thja =25k/w r thja =125k/w r thja =150k/w figure 3. reverse current vs. junction temperature figure 4. max. reverse power dissipation vs. junction temperature 1 10 100 25 50 75 100 125 150 t j ? junction temperature ( c ) 16430 v r = v rrm i ? reverse current ( a ) r 0 20 40 60 80 100 120 25 50 75 100 125 150 t j ? junction temperature ( c ) 16431 v r = v rrm p ? reverse power dissipation ( mw ) r p r ?limit @100%v r p r ?limit @80%v r
vishay byg21 document number 86010 rev. 1.5, 09-oct-00 vishay semiconductors www.vishay.com 3 figure 5. diode capacitance vs. reverse voltage 0 5 10 15 20 25 0.1 1.0 10.0 100.0 v r ? reverse voltage ( v ) 16432 c ? diode capacitance ( pf ) d f=1mhz figure 6. max. reverse recovery charge vs. forward current 0 50 100 150 200 q ? reverse recovery charge ( nc ) rr 94 9350 0 0.2 0.4 0.6 0.8 i f ? forward current ( a ) 1.0 t amb =125 c i r =0.5a, i r =0.125a 75 c 50 c 25 c 100 c figure 7. thermal response 1 10 100 1000 z ? thermal resistance for pulse cond. (k/w ) thp t p ? pulse length ( s ) 94 9339 10 ?5 10 ?4 10 ?3 10 ?2 10 ?1 10 0 10 1 10 2 t p /t=0.5 t p /t=0.2 t p /t=0.1 t p /t=0.05 t p /t=0.02 t p /t=0.01 single pulse 125k/w dc
www.vishay.com 4 document number 86010 rev. 1.5, 09-oct-00 vishay byg21 vishay semiconductors package dimensions in mm 14275-1 2.15 0.15 0.1 0.07 0.2 5.3 +0.2 / -0.4 4.4 3 +0.3 / -0.5 2.6 +0.2 / -0.3 1.5 +0.2 / -0.1 iso method e +0.1 / -0.2 plastic case jedec do 214 similar to sma cathode indicated b y a b and technical dra w ings according to di n specifications
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